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1N5615US thru 1N5623US SURFACE MOUNT VOIDLESSHERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This "fast recovery" surface mount rectifier diode series is military qualified to MILPRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in axial-leaded package configurations for thru-hole mounting (see separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
APPEARANCE
WWW .Microsemi .C OM
Package "A" or D-5A
FEATURES
* Surface mount package series equivalent to the JEDEC registered 1N5615 to 1N5623 series * Voidless hermetically sealed glass package * Triple-Layer Passivation * Internal "Category I" Metallurgical bonds * Working Peak Reverse Voltage 200 to 1000 Volts. * JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/429 * Axial-leaded equivalents also available (see separate data sheet for 1N5615 thru 1N5623) * * * * * * * *
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
* * * * * * Junction & Storage Temperature: -65 C to +175 C Thermal Resistance: 7oC/W junction to end cap Thermal Impedance: 4.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55C Forward Surge Current: 30 Amps @ 8.3 ms half-sine Solder Temperatures: 260C for 10 s (maximum)
o o
MECHANICAL AND PACKAGING
* * CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead (Sn/Pb) finish. MARKING & POLARITY: Cathode band only TAPE & REEL option: Standard per EIA-481-B WEIGHT: 193 mg See package dimensions and recommended pad layout on last page
REVERSE CURRENT (MAX.) IR @ VRWM
o
* * * *
ELECTRICAL CHARACTERISTICS
TYPE WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 200 400 600 800 1000 MINIMUM BREAKDOWN VOLTAGE VBR @ 50A VOLTS 220 440 660 880 1100 AVERAGE RECTIFIED CURRENT IO @ T A (NOTE 1) AMPS o o 50 C 100 C 1.00 .750 1.00 .750 1.00 .750 1.00 .750 1.00 .750 FORWAR D VOLTAGE (MAX.) VF @ 3A VOLTS .8 MIN. CAPACITANCE (MAX.) C @ VR =12 V f=1 MHz pF 45 35 25 20 15 MAXIMUM SURGE CURRENT IFSM (NOTE 2) AMPS 25 25 25 25 25 REVERSE RECOVERY (MAX.) (NOTE 3) trr ns 150 150 250 300 500
1N5615US - 1N5623US
1N5615US 1N5617US 1N5619US 1N5621US 1N5623US
1.6 MAX.
25 C .5 .5 .5 .5 .5
A o 100 C 25 25 25 25 25
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal o resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 C. o NOTE 2: TA = 100 C, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250 A
Copyright (c) 2007 1-15-2007 REV D
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5615US thru 1N5623US SURFACE MOUNT VOIDLESSHERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .Microsemi .C OM
Symbol
VBR VRWM IO VF IR C trr
SYMBOLS & DEFINITIONS Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
GRAPHS
FIGURE 1 TYPICAL REVERSE CURRENT vs VR
FIGURE 2 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT
1N5615US - 1N5623US
Copyright (c) 2007 1-15-2007 REV D
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N5615US thru 1N5623US SURFACE MOUNT VOIDLESSHERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
PACKAGE DIMENSIONS AND PAD LAYOUT
WWW .Microsemi .C OM
NOTE: This Package Outline has also previously been identified as "D-5A"
INCHES MIN BD BL ECT S .097 .185 .019 .003 MAX .103 .200 .028 --MIN 2.46 4.70 0.48 0.08 mm MAX 2.62 5.08 0.71 --A B C
PAD LAYOUT
INCHES 0.246 0.067 0.105 mm 6.25 1.70 2.67
Note: If mounting requires adhesive separate from the solder, an additional 0.060 inch diameter contact may be placed in the center between the pads as an optional spot for cement.
1N5615US - 1N5623US
Copyright (c) 2007 1-15-2007 REV D
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3

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